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ContactSQ4946EY-T1-E3
MOSFET 2N-CH 60V 4.5A 8SOIC
- Manufacturer: Vishay Siliconix
- NO: 880-SQ4946EY-T1-E3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4590
- Description: MOSFET 2N-CH 60V 4.5A 8SOIC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 186.993455mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.7W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.7W |
| Turn On Delay Time | 13 ns |
| Power - Max | 2.4W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 4.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.055Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 30A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.55mm |
| Length | 5mm |
| Width | 4mm |
| RoHS Status | ROHS3 Compliant |
