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ContactSP8K2TB
MOSFET 2N-CH 30V 6A 8-SOIC
- Manufacturer: ROHM Semiconductor
- NO: 687-SP8K2TB
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5101
- Description: MOSFET 2N-CH 30V 6A 8-SOIC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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example (South Africa, Brazil, India, Pakistan, Israel, etc.)
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e2 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 6A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | *K2 |
| Pin Count | 8 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 9 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10.1nC @ 5V |
| Rise Time | 21ns |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain-source On Resistance-Max | 0.047Ohm |
| Pulsed Drain Current-Max (IDM) | 24A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
