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SMMBTA92LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SMMBTA92LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9842
- Description: SMMBTA92LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 19 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Frequency | 50MHz |
| Base Part Number | MMBTA92 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 30mA 10V |
| Current - Collector Cutoff (Max) | 250nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 300V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Max Breakdown Voltage | 300V |
| Collector Base Voltage (VCBO) | 300V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| Height | 1.11mm |
| Length | 3.04mm |
| Width | 2.64mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
SMMBTA92LT1G Overview
This device has a DC current gain of 25 @ 30mA 10V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5V for high efficiency.As you can see, the part has a transition frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.Maximum collector currents can be below 500mA volts.
SMMBTA92LT1G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
SMMBTA92LT1G Applications
There are a lot of ON Semiconductor SMMBTA92LT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
