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ContactSLA5060
MOSFET 3N/3P-CH 60V 6A 12-SIP
- Manufacturer: Sanken
- NO: 681-SLA5060
- Package: 12-SIP
- Datasheet:
- Stock: 6953
- Description: MOSFET 3N/3P-CH 60V 6A 12-SIP(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
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(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 12-SIP |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2001 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Max Power Dissipation | 5W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 12 |
| JESD-30 Code | R-PSFM-T12 |
| Qualification Status | Not Qualified |
| Number of Elements | 6 |
| Configuration | COMPLEX |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Power - Max | 5W |
| FET Type | 3 N and 3 P-Channel (3-Phase Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 220m Ω @ 3A, 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Continuous Drain Current (ID) | 6A |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain-source On Resistance-Max | 0.22Ohm |
| Pulsed Drain Current-Max (IDM) | 10A |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
