SIZ702DT-T1-GE3

SIZ702DT-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Utmel


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIZ702DT-T1-GE3
  • Package: 6-PowerPair™
  • Datasheet: pdf
  • Stock: 1983
  • Description: SIZ702DT-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Base Part Number SIZ702
Number of Elements 2
Number of Channels 2
Turn On Delay Time 15 ns
Power - Max 27W 30W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 12mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 790pF
FET Feature Logic Level Gate
Drain to Source Resistance 12mOhm
Rds On Max 12 mΩ
Height 750μm
Length 6mm
Width 3.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerPair™
Number of Pins 6
Supplier Device Package 6-PowerPair™
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 4.5W

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