SIZ700DT-T1-GE3

MOSFET 20V 16A 2.36/2.8W 8.6/5.8mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIZ700DT-T1-GE3
  • Package: 6-PowerPair™
  • Datasheet: pdf
  • Stock: 7775
  • Description: MOSFET 20V 16A 2.36/2.8W 8.6/5.8mohm @ 10V(Kg)

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  • Delivery: Delivery
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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerPair™
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Max Power Dissipation 2.8W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code R-XDSO-C6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 12 ns
Power - Max 2.36W 2.8W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 8.6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 13.1A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 60A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 750μm
Length 6mm
Width 3.73mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

In Stock

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