SIS892DN-T1-GE3

SIS892DN-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIS892DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: pdf
  • Stock: 2279
  • Description: SIS892DN-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 611pF @ 50V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.029Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 5 mJ
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

SIS892DN-T1-GE3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 611pF @ 50V is its maximum input capacitance.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Peak drain current is 50A, which is the maximum pulsed drain current.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

SIS892DN-T1-GE3 Features


the avalanche energy rating (Eas) is 5 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 17 ns
based on its rated peak drain current 50A.
a threshold voltage of 3V

SIS892DN-T1-GE3 Applications


There are a lot of Vishay Siliconix SIS892DN-T1-GE3 applications of single MOSFETs transistors.

  • Consumer Appliances
  • LCD/LED/ PDP TV Lighting
  • Battery Protection Circuit
  • Lighting
  • Synchronous Rectification
  • General Purpose Interfacing Switch
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • DC/DC converters
  • Industrial Power Supplies
  • Micro Solar Inverter

In Stock

Please send RFQ , we will respond immediately.