SIR826ADP-T1-GE3

MOSFET (Metal Oxide) N-Channel Digi-Reel® 5.5m Ω @ 20A, 10V ±20V 2800pF @ 40V 86nC @ 10V PowerPAK® SO-8


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIR826ADP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: pdf
  • Stock: 850
  • Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 5.5m Ω @ 20A, 10V ±20V 2800pF @ 40V 86nC @ 10V PowerPAK® SO-8 (Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

authentication (1) authentication (2) authentication (3) authentication (4) authentication (5) authentication (6) authentication (7) authentication (8) authentication (9)

Purchase & Inquiry

Transport

User guide

Purchase

You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 40V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 23.8A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 60A
Drain to Source Breakdown Voltage 80V
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2013
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 5.5mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Pin Count 8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN

SIR826ADP-T1-GE3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2800pF @ 40V.The drain current is the maximum continuous current the device can conduct, and this device has 23.8A continuous drain current (ID).Using VGS=80V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 80V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 60A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 34 ns.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.2V threshold voltage.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SIR826ADP-T1-GE3 Features


a continuous drain current (ID) of 23.8A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 34 ns
a threshold voltage of 1.2V

SIR826ADP-T1-GE3 Applications


There are a lot of Vishay Siliconix SIR826ADP-T1-GE3 applications of single MOSFETs transistors.

  • LCD/LED TV
  • Battery Protection Circuit
  • PFC stages, hard switching PWM stages and resonant switching
  • Synchronous Rectification
  • Telecom 1 Sever Power Supplies
  • General Purpose Interfacing Switch
  • Micro Solar Inverter
  • Motor drives and Uninterruptible Power Supplies
  • Motor Drives and Uninterruptible Power Supples
  • Server power supplies

In Stock

Please send RFQ , we will respond immediately.