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MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 6m Ω @ 20A, 10V 1750pF @ 30V 40nC @ 10V PowerPAK® SO-8
- Manufacturer: Vishay Siliconix
- NO: 880-SIR664DP-T1-GE3
- Package: PowerPAK® SO-8
- Datasheet:
- Stock: 8047
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 6m Ω @ 20A, 10V 1750pF @ 30V 40nC @ 10V PowerPAK® SO-8 (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| JESD-30 Code | R-PDSO-C5 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 5W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Rise Time | 12ns |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 60A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.006Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Avalanche Energy Rating (Eas) | 20 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Number of Pins | 8 |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
