SIR640ADP-T1-GE3

Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIR640ADP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: pdf
  • Stock: 308
  • Description: Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP(Kg)

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SPECIFICATIONS

Parameters
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 20V
Current - Continuous Drain (Id) @ 25°C 41.6A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 350A
Height 1.04mm
Length 6.15mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

In Stock

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