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ContactSIA907EDJT-T1-GE3
SiA907EDJT Series Dual P Channel 20 V 0.057 Ohm 7.8 W Mosfet - PowerPAK SC-70-6L
- Manufacturer: Vishay Siliconix
- NO: 880-SIA907EDJT-T1-GE3
- Package: PowerPAK® SC-70-6 Dual
- Datasheet:
- Stock: 4118
- Description: SiA907EDJT Series Dual P Channel 20 V 0.057 Ohm 7.8 W Mosfet - PowerPAK SC-70-6L(Kg)
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- Payment:
In Stock
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Number of Pins | 6 |
| Weight | 28.009329mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | TrenchFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 57mOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 7.8W |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.9W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 57m Ω @ 3.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 4.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 4.5A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
