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ContactSI9934BDY-T1-GE3
MOSFET 12V 6.4A 2.0W 35mohm @ 4.5V
- Manufacturer: Vishay Siliconix
- NO: 880-SI9934BDY-T1-GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3651
- Description: MOSFET 12V 6.4A 2.0W 35mohm @ 4.5V(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 250 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | SI9934 |
| Pin Count | 8 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.1W |
| Turn On Delay Time | 19 ns |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 6.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time (Typ) | 50 ns |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 4.8A |
| Threshold Voltage | -1.4V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.035Ohm |
| Drain to Source Breakdown Voltage | 12V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1.4 V |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
