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ContactSI9926CDY-T1-E3
MOSFET 2N-CH 20V 8A 8-SOIC
- Manufacturer: Vishay Siliconix
- NO: 880-SI9926CDY-T1-E3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5679
- Description: MOSFET 2N-CH 20V 8A 8-SOIC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Weight | 186.993455mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 18mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Base Part Number | SI9926 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Power Dissipation | 3.1W |
| Turn On Delay Time | 10 ns |
| Power - Max | 3.1W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 8A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 1.2nF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 18mOhm |
| Rds On Max | 18 mΩ |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
