SI8900EDB-T2-E1

MOSFET 2N-CH 20V 5.4A 10-MFP


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI8900EDB-T2-E1
  • Package: 10-UFBGA, CSPBGA
  • Datasheet: pdf
  • Stock: 554
  • Description: MOSFET 2N-CH 20V 5.4A 10-MFP(Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI8900
Pin Count 10
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
FET Type 2 N-Channel (Dual) Common Drain
Vgs(th) (Max) @ Id 1V @ 1.1mA
Current - Continuous Drain (Id) @ 25°C 5.4A
Rise Time 4.5μs
Fall Time (Typ) 4.5 μs
Turn-Off Delay Time 55 μs
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5.4A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Drain to Source Resistance 24mOhm
Rds On Max 24 mΩ
RoHS Status ROHS3 Compliant
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-UFBGA, CSPBGA
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Resistance 40mOhm
Terminal Finish TIN SILVER COPPER
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260

In Stock

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