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ContactSI8439DB-T1-E1
MOSFET (Metal Oxide) P-Channel Digi-Reel® 25m Ω @ 1.5A, 4.5V ±5V 50nC @ 4.5V 8V 4-UFBGA
- Manufacturer: Vishay Siliconix
- NO: 880-SI8439DB-T1-E1
- Package: 4-UFBGA
- Datasheet:
- Stock: 14735
- Description: MOSFET (Metal Oxide) P-Channel Digi-Reel® 25m Ω @ 1.5A, 4.5V ±5V 50nC @ 4.5V 8V 4-UFBGA (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Fall Time (Typ) | 210 ns |
| Turn-Off Delay Time | 330 ns |
| Continuous Drain Current (ID) | -9.2A |
| Threshold Voltage | -400mV |
| Gate to Source Voltage (Vgs) | -800mV |
| Drain-source On Resistance-Max | 0.025Ohm |
| Drain to Source Breakdown Voltage | -8V |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Series | TrenchFET® |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.1W Ta 2.7W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 30 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| Rise Time | 25ns |
| Drain to Source Voltage (Vdss) | 8V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
| Vgs (Max) | ±5V |
