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SI7994DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Utmel
- Manufacturer: Vishay Siliconix
- NO: 880-SI7994DP-T1-GE3
- Package: PowerPAK® SO-8 Dual
- Datasheet:
- Stock: 11545
- Description: SI7994DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Utmel(Kg)
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| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 60A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Height | 1.04mm |
| Length | 4.9mm |
| Width | 5.89mm |
| REACH SVHC | Unknown |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Number of Pins | 8 |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 56MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Max Power Dissipation | 3.5W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | SI7994 |
| Pin Count | 8 |
| JESD-30 Code | R-XDSO-C6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 35 ns |
| Power - Max | 46W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.6m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
