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ContactSI7983DP-T1-GE3
MOSFET 20V 12A 3.5W 17mohm @ 4.5V
- Manufacturer: Vishay Siliconix
- NO: 880-SI7983DP-T1-GE3
- Package: PowerPAK® SO-8 Dual
- Datasheet:
- Stock: 7248
- Description: MOSFET 20V 12A 3.5W 17mohm @ 4.5V(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Weight | 506.605978mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 17mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Base Part Number | SI7983 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Turn On Delay Time | 35 ns |
| Power - Max | 1.4W |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 12A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 600μA |
| Current - Continuous Drain (Id) @ 25°C | 7.7A |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 4.5V |
| Rise Time | 60ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 190 ns |
| Turn-Off Delay Time | 390 ns |
| Continuous Drain Current (ID) | 7.7A |
| Gate to Source Voltage (Vgs) | 8V |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 17mOhm |
| Rds On Max | 17 mΩ |
| Height | 1.04mm |
| Length | 4.9mm |
| Width | 5.89mm |
| RoHS Status | ROHS3 Compliant |
