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ContactSI7980DP-T1-GE3
MOSFET 2N-CH 20V 8A PPAK SO-8
- Manufacturer: Vishay Siliconix
- NO: 880-SI7980DP-T1-GE3
- Package: PowerPAK® SO-8 Dual
- Datasheet:
- Stock: 2184
- Description: MOSFET 2N-CH 20V 8A PPAK SO-8(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Number of Pins | 8 |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Max Power Dissipation | 21.9W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | SI7980 |
| Pin Count | 8 |
| JESD-30 Code | R-XDSO-C6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| Power - Max | 19.8W 21.9W |
| FET Type | 2 N-Channel (Half Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 18ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 8A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 30A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Height | 1.04mm |
| Length | 4.9mm |
| Width | 5.89mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
