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ContactSI7946DP-T1-GE3
MOSFET 150V 3.3A 3.5W 150mohm @ 10V
- Manufacturer: Vishay Siliconix
- NO: 880-SI7946DP-T1-GE3
- Package: PowerPAK® SO-8 Dual
- Datasheet:
- Stock: 7911
- Description: MOSFET 150V 3.3A 3.5W 150mohm @ 10V(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | PURE MATTE TIN |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.4W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | SI7946 |
| Pin Count | 8 |
| JESD-30 Code | R-XDSO-C6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 3.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 2.1A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.15Ohm |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 10A |
| Avalanche Energy Rating (Eas) | 4 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
