SI6969BDQ-T1-GE3

MOSFET 2P-CH 12V 4A 8TSSOP


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI6969BDQ-T1-GE3
  • Package: 8-TSSOP (0.173, 4.40mm Width)
  • Datasheet: pdf
  • Stock: 1555
  • Description: MOSFET 2P-CH 12V 4A 8TSSOP(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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IMPORTANT NOTICE

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Weight 157.991892mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 30mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 830mW
Base Part Number SI6969
Number of Channels 2
Element Configuration Dual
Turn On Delay Time 20 ns
Power - Max 830mW
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 30mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 4A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) -4.6A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
FET Feature Logic Level Gate
Drain to Source Resistance 30mOhm
Rds On Max 30 mΩ
Height 1mm
Length 3mm
Width 4.4mm
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.