SI6966DQ-T1-E3

MOSFET 2N-CH 20V 4A 8TSSOP


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI6966DQ-T1-E3
  • Package: 8-TSSOP (0.173, 4.40mm Width)
  • Datasheet: pdf
  • Stock: 2554
  • Description: MOSFET 2N-CH 20V 4A 8TSSOP(Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
Turn On Delay Time 11 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 30m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 9ns
Fall Time (Typ) 9 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1mm
Length 3mm
Width 4.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Weight 157.991892mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Power Dissipation 830mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI6966

In Stock

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