SI5997DU-T1-GE3

SI5997DU-T1-GE3 Dual P-channel MOSFET Transistor; 4.1A; 30V; 8-Pin PowerPAK ChipFET


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI5997DU-T1-GE3
  • Package: PowerPAK® ChipFET™ Dual
  • Datasheet: pdf
  • Stock: 9169
  • Description: SI5997DU-T1-GE3 Dual P-channel MOSFET Transistor; 4.1A; 30V; 8-Pin PowerPAK ChipFET(Kg)

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The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® ChipFET™ Dual
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 10.4W
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-C6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 5.1A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.054Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.