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ContactSI5936DU-T1-GE3
MOSFET 30V 6.0A 10.4W 30mOhm @ 10V
- Manufacturer: Vishay Siliconix
- NO: 880-SI5936DU-T1-GE3
- Package: PowerPAK® ChipFET™ Dual
- Datasheet:
- Stock: 3797
- Description: MOSFET 30V 6.0A 10.4W 30mOhm @ 10V(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 2.3W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| Power - Max | 10.4W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 65ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain-source On Resistance-Max | 0.03Ohm |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 850μm |
| Length | 3.08mm |
| Width | 1.98mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2016 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
