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ContactSI5915BDC-T1-E3
MOSFET 2P-CH 8V 4A 1206-8
- Manufacturer: Vishay Siliconix
- NO: 880-SI5915BDC-T1-E3
- Package: 8-SMD, Flat Lead
- Datasheet:
- Stock: 4006
- Description: MOSFET 2P-CH 8V 4A 1206-8(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Max Power Dissipation | 3.1W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | SI5915 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.7W |
| Case Connection | DRAIN |
| Power - Max | 3.1W |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 70m Ω @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 8V |
| Rise Time | 12ns |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 4A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 0.07Ohm |
| Drain to Source Breakdown Voltage | 8V |
| Pulsed Drain Current-Max (IDM) | 10A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
