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ContactSI5902BDC-T1-E3
MOSFET 2N-CH 30V 4A 1206-8
- Manufacturer: Vishay Siliconix
- NO: 880-SI5902BDC-T1-E3
- Package: 8-SMD, Flat Lead
- Datasheet:
- Stock: 4724
- Description: MOSFET 2N-CH 30V 4A 1206-8(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Drain to Source Resistance | 65mOhm |
| Rds On Max | 65 mΩ |
| Height | 1.1mm |
| Length | 3.05mm |
| Width | 1.65mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Supplier Device Package | 1206-8 ChipFET™ |
| Weight | 84.99187mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 65mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.12W |
| Base Part Number | SI5902 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 4 ns |
| Power - Max | 3.12W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 4A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 220pF |
| FET Feature | Logic Level Gate |
