SI5515DC-T1-E3

MOSFET N/P-CH 20V 4.4A 1206-8


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI5515DC-T1-E3
  • Package: 8-SMD, Flat Lead
  • Datasheet: pdf
  • Stock: 4815
  • Description: MOSFET N/P-CH 20V 4.4A 1206-8(Kg)

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  • Payment: payment

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Min Operating Temperature -55°C
Max Power Dissipation 1.1W
Base Part Number SI5515
Number of Elements 2
Number of Channels 2
Power Dissipation 1.1W
Turn On Delay Time 18 ns
Power - Max 1.1W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 40mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.4A 3A
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Rise Time 32ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 4.4A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
FET Feature Logic Level Gate
Drain to Source Resistance 69mOhm
Rds On Max 40 mΩ
Nominal Vgs 400 mV
Height 1.1mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Supplier Device Package 1206-8 ChipFET™
Weight 84.99187mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 40mOhm
Max Operating Temperature 150°C

In Stock

Please send RFQ , we will respond immediately.