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ContactSI4946CDY-T1-GE3
SI4946CDY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Utmel
- Manufacturer: Vishay Siliconix
- NO: 880-SI4946CDY-T1-GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 6572
- Description: SI4946CDY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Utmel(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2017 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Number of Channels | 2 |
| Power Dissipation | 2W |
| Turn On Delay Time | 8 ns |
| Power - Max | 2W Ta 2.8W Tc |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 40.9mOhm @ 5.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A Ta 6.1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 5.2A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Standard |
| Drain to Source Resistance | 33mOhm |
| Height | 1.75mm |
| RoHS Status | ROHS3 Compliant |
