SI4834CDY-T1-E3

MOSFET 30V 8.0A 2.9W 20mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI4834CDY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 7494
  • Description: MOSFET 30V 8.0A 2.9W 20mohm @ 10V(Kg)

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  • Delivery: Delivery
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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2W
Base Part Number SI4834
Number of Elements 2
Power Dissipation 2W
Turn On Delay Time 17 ns
Power - Max 2.9W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Input Capacitance 950pF
FET Feature Standard
Drain to Source Resistance 20mOhm
Rds On Max 20 mΩ
Nominal Vgs 3 V
Radiation Hardening No
RoHS Status ROHS3 Compliant

In Stock

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