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ContactSI4622DY-T1-GE3
MOSFET 30V 8.0A 3.3/3.1W 16/26.4mohm @ 10V
- Manufacturer: Vishay Siliconix
- NO: 880-SI4622DY-T1-GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4075
- Description: MOSFET 30V 8.0A 3.3/3.1W 16/26.4mohm @ 10V(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 186.993455mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | SkyFET®, TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 3.1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | SI4622 |
| Pin Count | 8 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.2W |
| Power - Max | 3.3W 3.1W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 9.6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2458pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 11 ns |
| Continuous Drain Current (ID) | 8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain-source On Resistance-Max | 0.016Ohm |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
