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ContactSI4618DY-T1-GE3
MOSFET 30V 8/15.2A DUAL NCH MOSFET w/Shottky
- Manufacturer: Vishay Siliconix
- NO: 880-SI4618DY-T1-GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3087
- Description: MOSFET 30V 8/15.2A DUAL NCH MOSFET w/Shottky(Kg)
- Delivery:
- Payment:
In Stock
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Weight | 506.605978mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.35W |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Power - Max | 1.98W 4.16W |
| FET Type | 2 N-Channel (Half Bridge) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1535pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 8A 15.2A |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Continuous Drain Current (ID) | 11.4A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 1.535nF |
| FET Feature | Standard |
| Drain to Source Resistance | 10mOhm |
| Rds On Max | 17 mΩ |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
