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ContactSI4561DY-T1-GE3
MOSFET N/P-Ch MOSFET 40V 35/35mohm @ 10V
- Manufacturer: Vishay Siliconix
- NO: 880-SI4561DY-T1-GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7430
- Description: MOSFET N/P-Ch MOSFET 40V 35/35mohm @ 10V(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 3.3W |
| Terminal Form | GULL WING |
| Reach Compliance Code | unknown |
| Base Part Number | SI4561 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Power - Max | 3W 3.3W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35.5m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A 7.2A |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 79ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 6.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5.6A |
| Drain-source On Resistance-Max | 0.0355Ohm |
| Drain to Source Breakdown Voltage | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
