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ContactSI4561DY-T1-E3
MOSFET N/P-CH 40V 6.8A 8-SOIC
- Manufacturer: Vishay Siliconix
- NO: 880-SI4561DY-T1-E3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7619
- Description: MOSFET N/P-CH 40V 6.8A 8-SOIC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Weight | 186.993455mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.3W |
| Base Part Number | SI4561 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Power Dissipation | 2W |
| Turn On Delay Time | 49 ns |
| Power - Max | 3W 3.3W |
| FET Type | N and P-Channel |
| Rds On (Max) @ Id, Vgs | 35.5mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A 7.2A |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 79ns |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 5.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Input Capacitance | 640pF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 35mOhm |
| Rds On Max | 35.5 mΩ |
| Height | 1.55mm |
| Length | 5mm |
| Width | 4mm |
| RoHS Status | ROHS3 Compliant |
