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ContactSI4554DY-T1-GE3
VISHAY SI4554DY-T1-GE3 Dual MOSFET, N and P Channel, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
- Manufacturer: Vishay Siliconix
- NO: 880-SI4554DY-T1-GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4451
- Description: VISHAY SI4554DY-T1-GE3 Dual MOSFET, N and P Channel, 8 A, 40 V, 0.02 ohm, 10 V, 1 V(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Weight | 506.605978mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Power Dissipation | 2W |
| Turn On Delay Time | 42 ns |
| Power - Max | 3.1W 3.2W |
| FET Type | N and P-Channel |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 6.8A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 8A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Input Capacitance | 690pF |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 21mOhm |
| Rds On Max | 24 mΩ |
| Height | 1.75mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
