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SI4542DY datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SI4542DY
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9898
- Description: SI4542DY datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Length | 4.9mm |
| Width | 3.9mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 16 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 7A |
| Base Part Number | SI4542D |
| Number of Elements | 2 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 28m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
| Rise Time | 22ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 47 ns |
| Continuous Drain Current (ID) | 6A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Nominal Vgs | 1.5 V |
| Height | 1.575mm |
SI4542DY Description
The complementary MOSFET devices are manufactured using on Semiconductor's advanced power trench process, which is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance.
SI4542DY Features
Q1: N-Channel
?6A, 30V
?RDS(ON) = 28 m|? @ VGS = 10 V
?RDS(ON) = 35 m|? @ VGS = 4.5 V
Q2: N-Channel
?-6A, -30V
?RDS(ON) = 32 m|? @ VGS = -10 V
?RDS(ON) = 45 m|? @ VGS = -4.5 V
SI4542DY Applications
This product is general usage and suitable for many different applications.
