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ContactSI4501ADY-T1-E3
MOSFET 30/8V 8.8/5.7A
- Manufacturer: Vishay Siliconix
- NO: 880-SI4501ADY-T1-E3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5233
- Description: MOSFET 30/8V 8.8/5.7A(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 18mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Base Part Number | SI4501 |
| Number of Elements | 2 |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 21 ns |
| Power - Max | 1.3W |
| FET Type | N and P-Channel, Common Drain |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.8A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 6.3A 4.1A |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Rise Time | 45ns |
| Drain to Source Voltage (Vdss) | 30V 8V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 60 ns |
| Continuous Drain Current (ID) | 6.3A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 8V |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 42mOhm |
| Rds On Max | 18 mΩ |
| Height | 1.5494mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
