SI3993CDV-T1-GE3

SI3993CDV-T1-GE3 Dual P-channel MOSFET Transistor; 2.3 A; 30 V; 6-Pin TSOP


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI3993CDV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 230
  • Description: SI3993CDV-T1-GE3 Dual P-channel MOSFET Transistor; 2.3 A; 30 V; 6-Pin TSOP(Kg)

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SPECIFICATIONS

Parameters
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 111m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.9A
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) -2.9A
Threshold Voltage -1.2V
JEDEC-95 Code MO-193AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.111Ohm
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs -1.2 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.4W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.14W
Turn On Delay Time 10 ns

In Stock

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