SI3981DV-T1-GE3

MOSFET 2P-CH 20V 1.6A 6-TSOP


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI3981DV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 7682
  • Description: MOSFET 2P-CH 20V 1.6A 6-TSOP(Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Continuous Drain Current (ID) -1.9A
Threshold Voltage -1.1V
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.185Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.1 V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 800mW
Terminal Form GULL WING
Base Part Number SI3981
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Turn On Delay Time 30 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 185m Ω @ 1.9A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.6A
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Rise Time 50ns
Fall Time (Typ) 21 ns
Turn-Off Delay Time 45 ns

In Stock

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