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ContactSI3585CDV-T1-GE3
MOSFET 20 Volts 3.9 Amps 1.4 Watts
- Manufacturer: Vishay Siliconix
- NO: 880-SI3585CDV-T1-GE3
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 2125
- Description: MOSFET 20 Volts 3.9 Amps 1.4 Watts(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 19.986414mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 195mOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.1W |
| Turn On Delay Time | 3 ns |
| Power - Max | 1.4W 1.3W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 58m Ω @ 2.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A 2.1A |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 20V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 2.1A |
| Threshold Voltage | 1.5V |
| JEDEC-95 Code | MO-193AA |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 3.9A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
