SI3529DV-T1-E3

MOSFET N/P-CH 40V 2.5A 6-TSOP


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI3529DV-T1-E3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 9865
  • Description: MOSFET N/P-CH 40V 2.5A 6-TSOP(Kg)

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  • Delivery: Delivery
  • Payment: payment

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IMPORTANT NOTICE

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 205pF
FET Feature Logic Level Gate
Drain to Source Resistance 215mOhm
Rds On Max 125 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package 6-TSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.4W
Number of Elements 2
Element Configuration Dual
Power Dissipation 1.15W
Power - Max 1.4W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 125mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 20V
Current - Continuous Drain (Id) @ 25°C 2.5A 1.95A
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 38ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 1.95A

In Stock

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