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ContactSI1905BDH-T1-E3
MOSFET 2P-CH 8V 0.63A SC70-6
- Manufacturer: Vishay Siliconix
- NO: 880-SI1905BDH-T1-E3
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 285
- Description: MOSFET 2P-CH 8V 0.63A SC70-6(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Supplier Device Package | SC-70-6 (SOT-363) |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 542MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 357mW |
| Base Part Number | SI1905 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 3.01W |
| Turn On Delay Time | 9 ns |
| Power - Max | 357mW |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 542mOhm @ 580mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 62pF @ 4V |
| Current - Continuous Drain (Id) @ 25°C | 630mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | -630mA |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 62pF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 542mOhm |
| Rds On Max | 542 mΩ |
| Nominal Vgs | -1 V |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
