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ContactSI1026X-T1-E3
MOSFET 2N-CH 60V 0.305A SOT563F
- Manufacturer: Vishay Siliconix
- NO: 880-SI1026X-T1-E3
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 7025
- Description: MOSFET 2N-CH 60V 0.305A SOT563F(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Supplier Device Package | SC-89-6 |
| Weight | 32.006612mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 3Ohm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Base Part Number | SI1026 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Power Dissipation | 250mW |
| Power - Max | 250mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 305mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 60V |
| Continuous Drain Current (ID) | 500mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 30pF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 3Ohm |
| Rds On Max | 1.4 Ω |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.2mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
