SH8J65TB1

MOSFET 2P-CH 30V 7A SOP8


  • Manufacturer: ROHM Semiconductor
  • NO: 687-SH8J65TB1
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 6702
  • Description: MOSFET 2P-CH 30V 7A SOP8(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

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Purchase & Inquiry

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User guide

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Means of Payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SOP
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Max Power Dissipation 2W
Base Part Number *J65
Power Dissipation 2W
Power - Max 2W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 29mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7A
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 7A
Drain to Source Breakdown Voltage -30V
Input Capacitance 1.2nF
FET Feature Logic Level Gate
Drain to Source Resistance 31mOhm
Rds On Max 29 mΩ
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.