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SGP23N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SGP23N60UFTU
- Package: TO-220-3
- Datasheet:
- Stock: 2034
- Description: SGP23N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 100W |
| Current Rating | 23A |
| Base Part Number | SG*23N60 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 100W |
| Input Type | Standard |
| Turn On Delay Time | 17 ns |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 60 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 23A |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Turn On Time | 55 ns |
| Test Condition | 300V, 12A, 23 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 12A |
| Continuous Collector Current | 23A |
| Turn Off Time-Nom (toff) | 320 ns |
| Current - Collector Pulsed (Icm) | 92A |
| Td (on/off) @ 25°C | 17ns/60ns |
| Switching Energy | 115μJ (on), 135μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| Fall Time-Max (tf) | 280ns |
| Height | 9.4mm |
| Length | 10.1mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 12 hours ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
SGP23N60UFTU Description
SGP23N60UFTU is a member of the UF series of Insulated Gate Bipolar Transistors (IGBTs) developed by ON Semiconductor. It is able to deliver low conduction and switching losses, high input inpedance, as well as short circuit ruggedness. As a result, it is ideally suitable for a wide range of applications, including general-purpose inverters and PFC requiring high-speed switching.
SGP23N60UFTU Features
Low conduction
Low switching losses
High input inpedance
Low saturation voltage
Package: TO-220
SGP23N60UFTU Applications
General inverter
PFC
