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SGH10N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SGH10N60RUFDTU
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 2997
- Description: SGH10N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 16A |
| Reverse Recovery Time | 60ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Turn On Time | 49 ns |
| Test Condition | 300V, 10A, 20 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 284 ns |
| Gate Charge | 30nC |
| Current - Collector Pulsed (Icm) | 30A |
| Td (on/off) @ 25°C | 15ns/36ns |
| Switching Energy | 141μJ (on), 215μJ (off) |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 75W |
| Current Rating | 10A |
| Base Part Number | SG*10N60 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 75W |
| Input Type | Standard |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
SGH10N60RUFDTU Description
SGH10N60RUFDTU is a 600v short circuit rated IGBT. Fairchild's RUFD series of insulated gate bipolar transistors (IGBTs) provide low conduction and switching losses as well as short-circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS), and general inverters where short circuit ruggedness is a required feature. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SGH10N60RUFDTU is in the TO-3P-3 package with 75W power dissipation.
SGH10N60RUFDTU Features
Short Circuit rated 10us @ T C = 100°C, V GE = 15V
High-Speed Switching
Low Saturation Voltage : V CE(sat) = 2.2 V @ I C = 10A
High Input Impedance
CO-PAK, IGBT with FRD: trr = 42ns (typ.)
SGH10N60RUFDTU Applications
AC & DC Motors Controls
General Purpose Inverters
Robotics
Servo Controls
