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SGB30N60ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Utmel
- Manufacturer: Infineon Technologies
- NO: 376-SGB30N60ATMA1
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 12204
- Description: SGB30N60ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Utmel(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | GB30N60 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 250W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 41A |
| Turn On Time | 78 ns |
| Test Condition | 400V, 30A, 11 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 391 ns |
| IGBT Type | NPT |
| Gate Charge | 140nC |
| Current - Collector Pulsed (Icm) | 112A |
| Td (on/off) @ 25°C | 44ns/291ns |
| Switching Energy | 1.29mJ |
| RoHS Status | RoHS Compliant |
