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SD57060 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-SD57060
- Package: M243
- Datasheet:
- Stock: 10015
- Description: SD57060 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | 65V |
| Input Capacitance | 88pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 28V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Mount | Screw |
| Package / Case | M243 |
| Number of Pins | 243 |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 65V |
| Max Power Dissipation | 108W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 7A |
| Frequency | 945MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | SD57060 |
| Pin Count | 3 |
| JESD-30 Code | R-PDFM-F2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 108W |
| Case Connection | SOURCE |
| Current - Test | 100mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 65V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 7A |
| Gate to Source Voltage (Vgs) | 20V |
| Gain | 15dB |
| Max Output Power | 60W |
| Drain Current-Max (Abs) (ID) | 7A |
SD57060 Description
For industrial and commercial broadband applications at frequencies up to 1.0 GHz, the SD57060 is an N-Channel common source enhancement-mode lateral field-effect RF power transistor. The SD57060 is made to operate in common source mode at 28V with good gain and broadband performance. For base station applications needing excellent linearity, it is perfect.
SD57060 Features
outstanding thermal stability
Config of common sources
POUT = 60W with a gain of 13dB at 945 MHz.
BeO no-cost package
In accordance with European Directive 2002/95/EC
SD57060 Applications
Switching applications
