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RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Mount | Screw |
| Package / Case | M246 |
| Number of Pins | 5 |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 65V |
| Max Power Dissipation | 217W |
| Terminal Form | FLAT |
| Current Rating | 14A |
| Frequency | 860MHz |
| Base Part Number | SD56120 |
| Pin Count | 4 |
| JESD-30 Code | R-PDFM-F4 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 217W |
| Case Connection | SOURCE |
| Current - Test | 400mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 65V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 14A |
| Gate to Source Voltage (Vgs) | 20V |
| Gain | 16dB |
| Max Output Power | 100W |
| Drain to Source Breakdown Voltage | 65V |
| Input Capacitance | 82pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 28V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
SD56120 N-channel Power MOSFET developed using SuperMESH technology. SD56120 MOSFET revolutionary, Avalanche-rugged, high-voltage Power technology relies on an original, exclusive vertical structure. It results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STMicroelectronics SD56120 is utilized in Switching applications.
Ultra low gate charge
Worldwide best FOM
Best RDS(on)
100% avalanche tested
Zener-protected
Notebook PC
Notebook Battery Pack
Load Switch
Synchronous Buck for Notebook Vcore and Server
Please send RFQ , we will respond immediately.