SD2931

SD2931 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-SD2931
  • Package: M244
  • Datasheet: pdf
  • Stock: 3702
  • Description: SD2931 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 292W
Current - Test 250mA
Drain to Source Voltage (Vdss) 125V
Transistor Type N-Channel
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Gain 15dB
Max Output Power 150W
Drain to Source Breakdown Voltage 125V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant
Mount Screw
Package / Case M244
Number of Pins 174
Packaging Tray
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation 292W
Terminal Position RADIAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 20A
Frequency 175MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number SD2931
JESD-30 Code O-PRFM-F4
Number of Elements 1
Element Configuration Single

SD2931 Description

 

SD2931 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes SD2931 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics SD2931 has the excellent thermal stability.

 

 

SD2931 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

 

 

SD2931 Applications

 

ISM applications

DC large signal applications


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