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SBCP53T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SBCP53T1G
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 471
- Description: SBCP53T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.5W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 50MHz |
| Base Part Number | BCP53 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 1.5W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Current - Collector (Ic) (Max) | 1.5A |
| Transition Frequency | 50MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
SBCP53T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.As you can see, the part has a transition frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
SBCP53T1G Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
SBCP53T1G Applications
There are a lot of ON Semiconductor SBCP53T1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
