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SBC857CLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SBC857CLT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5478
- Description: SBC857CLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Max Frequency | 100MHz |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -650mV |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 1.11mm |
| Length | 3.04mm |
| Width | 2.64mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
SBC857CLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.A collector emitter saturation voltage of -650mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.In the part, the transition frequency is 100MHz.Collector current can be as low as 100mA volts at its maximum.
SBC857CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
SBC857CLT1G Applications
There are a lot of ON Semiconductor SBC857CLT1G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
